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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1565 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Complement type 2SB1087 APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 100 100 7 5 10 0.5 UNIT V V V A A A Emitter-base voltage Collector current Collector current-peak Base current TC=25ae PT Total power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 30 W 1.5 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V 2000 500 MIN 100 2SD1565 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 2.0 1.0 5.0 20000 |I V V A mA Switching times ton ts tf Fall time Turn-on time Storage time hFE-1 classifications M 2000-5000 L 4000-10000 K 8000-20000 INC E SEM ANG H IC=2A; IB1=-IB2=2mA RL=25| ; VCCO 50V OND IC TOR UC 1.0 |I 3.5 1.2 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1565 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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