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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1565
DESCRIPTION With TO-220 package High DC current gain DARLINGTON Complement type 2SB1087 APPLICATIONS For low frequency power amplifier and power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER

INC
Collector-base voltage
Collector-emitter voltage
E SEM ANG H
Open emitter Open base Open collector
CONDITIONS
OND IC
TOR UC
VALUE 100 100 7 5 10 0.5
UNIT V V V A A A
Emitter-base voltage Collector current Collector current-peak Base current
TC=25ae PT Total power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
30 W 1.5 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V 2000 500 MIN 100
2SD1565
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V
1.5 2.0 1.0 5.0 20000 |I
V V A mA
Switching times ton ts tf
Fall time
Turn-on time Storage time

hFE-1 classifications M 2000-5000 L 4000-10000 K 8000-20000
INC
E SEM ANG H
IC=2A; IB1=-IB2=2mA RL=25| ; VCCO 50V
OND IC
TOR UC
1.0 |I 3.5 1.2 |I
s |I s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1565

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
3


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